Title :
Enhanced relaxation oscillation frequency and reduced nonlinear K-factor in InGaAs/InGaAsP MQW lambda /4-shifted DFB lasers
Author :
Aoki, Masaki ; Uomi, K. ; Tsuchiya, Takao ; Suzuki, M. ; Chinone, N.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
The relaxation oscillation frequency, fr, of 1.55 mu m InGaAs/InGaAsP MQW lambda /4-shifted DFB lasers was doubled by increasing the carrier injection efficiency into each quantum well, which results from an optimised bandgap energy and optimised thickness of the barrier layers. The nonlinear K-factor which determines the maximum modulation bandwidth through the damping phenomenon can be reduced by adopting a p-type modulation doped MQW structure in the active layer.
Keywords :
III-V semiconductors; distributed feedback lasers; energy gap; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; semiconductor quantum wells; 1.55 micron; DFB lasers; InGaAs-InGaAsP; MQW; active layer; barrier layers; carrier injection efficiency; damping phenomenon; maximum modulation bandwidth; optimised bandgap energy; optimised thickness; p-type modulation doped MQW structure; reduced nonlinear K-factor; relaxation oscillation frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901185
