• DocumentCode
    1267355
  • Title

    Enhanced relaxation oscillation frequency and reduced nonlinear K-factor in InGaAs/InGaAsP MQW lambda /4-shifted DFB lasers

  • Author

    Aoki, Masaki ; Uomi, K. ; Tsuchiya, Takao ; Suzuki, M. ; Chinone, N.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    26
  • Issue
    22
  • fYear
    1990
  • Firstpage
    1841
  • Lastpage
    1843
  • Abstract
    The relaxation oscillation frequency, fr, of 1.55 mu m InGaAs/InGaAsP MQW lambda /4-shifted DFB lasers was doubled by increasing the carrier injection efficiency into each quantum well, which results from an optimised bandgap energy and optimised thickness of the barrier layers. The nonlinear K-factor which determines the maximum modulation bandwidth through the damping phenomenon can be reduced by adopting a p-type modulation doped MQW structure in the active layer.
  • Keywords
    III-V semiconductors; distributed feedback lasers; energy gap; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; semiconductor quantum wells; 1.55 micron; DFB lasers; InGaAs-InGaAsP; MQW; active layer; barrier layers; carrier injection efficiency; damping phenomenon; maximum modulation bandwidth; optimised bandgap energy; optimised thickness; p-type modulation doped MQW structure; reduced nonlinear K-factor; relaxation oscillation frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901185
  • Filename
    59455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1267355