• DocumentCode
    1267364
  • Title

    First-order, switched-capacitor, low-pass filter implemented with GaAs insulated-gate FET switches

  • Author

    Luck, J. ; Swanson, J.G.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., King´s Coll. London, UK
  • Volume
    26
  • Issue
    22
  • fYear
    1990
  • Firstpage
    1843
  • Lastpage
    1845
  • Abstract
    The application of the GaAs insulated-gate FET in switched-capacitor circuits is demonstrated. This is achieved by constructing a first-order, switched-capacitor, low-pass filter from monolithic GaAs IGFET switches and discrete capacitors. Hysteresis in the FET characteristic is shown to be unimportant. FET switching is shown to be independent of the absolute level of the switching signal.
  • Keywords
    III-V semiconductors; active filters; gallium arsenide; insulated gate field effect transistors; low-pass filters; switched capacitor filters; GaAs; IGFET; discrete capacitors; first-order filters; insulated-gate FET switches; low-pass filter; switched-capacitor circuits; switching signal;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901186
  • Filename
    59456
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1267364