DocumentCode :
1267364
Title :
First-order, switched-capacitor, low-pass filter implemented with GaAs insulated-gate FET switches
Author :
Luck, J. ; Swanson, J.G.
Author_Institution :
Dept. of Electron. & Electr. Eng., King´s Coll. London, UK
Volume :
26
Issue :
22
fYear :
1990
Firstpage :
1843
Lastpage :
1845
Abstract :
The application of the GaAs insulated-gate FET in switched-capacitor circuits is demonstrated. This is achieved by constructing a first-order, switched-capacitor, low-pass filter from monolithic GaAs IGFET switches and discrete capacitors. Hysteresis in the FET characteristic is shown to be unimportant. FET switching is shown to be independent of the absolute level of the switching signal.
Keywords :
III-V semiconductors; active filters; gallium arsenide; insulated gate field effect transistors; low-pass filters; switched capacitor filters; GaAs; IGFET; discrete capacitors; first-order filters; insulated-gate FET switches; low-pass filter; switched-capacitor circuits; switching signal;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19901186
Filename :
59456
Link To Document :
بازگشت