An improved transmission-line model for MOS transistors

Author

Abou-Allam, Eyad ; Manku, Tajinder

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

Volume

46

Issue

11

fYear

1999

fDate

11/1/1999 12:00:00 AM

Firstpage

1380

Lastpage

1387

Abstract

In this paper, we present a high-frequency small-signal model for MOSFET devices operating in the saturation regime. The model is based on a transmission-line treatment of the gate region, taking into account the distributed resistance-capacitance effects along the width of the device. The gate-source resistance, as well as the induced gate noise arising from the nonquasi-static operation, are included in the model. Closed-form solution of the noise and the y-parameters are obtained. The model is verified with measurements of an 0.8-μm device. The y-parameters model is in close agreement with the measured parameters up to 15 GHz, which is higher than the f_T of the device. The noise model was also verified by comparing the modeled and measured noise resistance

Keywords

MOSFET; UHF field effect transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; 0 to 15 GHz; 0.8 micron; MOS transistors; closed-form solution; distributed resistance-capacitance effects; gate region; gate-source resistance; high-frequency small-signal model; induced gate noise; measured noise resistance; nonquasi-static operation; saturation regime; transmission-line model; y-parameters; CMOS technology; Capacitance; Circuit noise; Cutoff frequency; Electrical resistance measurement; MOSFET circuits; Radio frequency; Semiconductor device modeling; Transmission line measurements; Transmission lines;

fLanguage

English

Journal_Title

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on

Publisher

ieee

ISSN

1057-7130

Type

jour

DOI

10.1109/82.803477

Filename

803477