DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off technique

Author

Shah, D.M. ; Chan, W.K. ; Gmitter, T.J. ; Florez, L.T. ; Schumacher, Hermann

Author_Institution

Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ, USA

Volume

Issue

fYear

1990

Firstpage

1865

Lastpage

1866

Abstract

GaAs MESFETs have been fabricated on a silicon substrate using a molecular beam epitaxy grown film detached from its growth substrate and attached on a silicon substrate covered with a dielectric. The device processing is done on the silicon substrate. The MESFETs exhibit I_DSS=130 mA/mm, g_m=135 mS/mm and for 1.3 mu m gate length unity current gain cut-off frequency f_T of 12 GHz. Excellent device isolation with subpicoampere leakage currents is obtained.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; leakage currents; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; 1.3 micron; 12 GHz; 135 mS; DC performance; GaAs-Si; MESFET; RF performance; Si; cut-off frequency; device isolation; dielectric; epitaxial lift-off technique; gate length; molecular beam epitaxy grown film; subpicoampere leakage currents; transconductance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19901199

Filename

59469

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1267510