• DocumentCode
    1267530
  • Title

    Improved Stress Reliability of Analog Metal–Insulator–Metal Capacitors Using \\hbox {TiO}_{2}/\\hbox {ZrO}_{2} Dielectrics

  • Author

    Lin, S.H. ; Chiang, K.C. ; Yeh, F.S. ; Chin, Albert

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • Volume
    30
  • Issue
    12
  • fYear
    2009
  • Firstpage
    1287
  • Lastpage
    1289
  • Abstract
    We have studied the stress reliability of high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal capacitors under constant-voltage stress. The increasing TiO2 thickness on ZrO2 improves the 125-degC leakage current, capacitance variation (DeltaC/C), and long-term reliability. For a high density of 26 fF/mum2, good extrapolated ten-year reliability of small DeltaC/C ~ 0.71% is obtained for the Ni/10-nm-TiO2/6.5-nm- ZrO2/ TiN device at 2.5-V operation.
  • Keywords
    MIM devices; high-k dielectric thin films; leakage currents; nickel; reliability; thin film capacitors; titanium; titanium compounds; zirconium compounds; Ni-TiO2-ZrO2-TiN; analog metal-insulator-metal capacitors; capacitance variation; constant-voltage stress; dielectrics; high-kappa metal-insulator-metal capacitors; leakage current; size 10 nm; size 6.5 nm; stress reliability; $hbox{ZrO}_{2}$; $hbox{TiO}_{2}$; High $kappa$; metal–insulator–metal (MIM); reliability;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2034113
  • Filename
    5313962
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1267530