Title :
4 Gbit/s pin/HBT monolithic photoreceiver
Author :
Chandrasekhar, S. ; Dentai, A.G. ; Joyner, Charles H. ; Johnson, Brett C. ; Gnauck, A.H. ; Qua, G.J.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
Heterojunction bipolar transistors have been monolithically integrated with a pin photodetector to realise a high speed transimpedance photoreceiver. The OEIC, made from MOVPE-growth InP/InGaAs heterostructures, had a bandwidth of 2.8 GHz with a transimpedance of 750 Omega . It was successfully operated at 4 Gbit/s with a sensitivity of -21 dBm at a wavelength of 1.5 mu m.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; receivers; 1.5 micron; 2.8 GHz; 4 Gbit/s; HBT; InP-InGaAs heterostructures; MOVPE-growth; OEIC; high speed transimpedance photoreceiver; monolithic photoreceiver; optoelectronic integrated circuits; pin photodetector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901209
