Title :
+134 dBm IIP3, 0.4-1 GHz common-drain stage with its high frequency analysis
Author :
Han, Hong Gul ; Kim, Tae Wook
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
A highly linear common-drain (CD) configuration is designed and measured. The third-order nonlinearity of the transconductance which is a major contributor to the third-order nonlinearity in the CD configuration, is linearised by applying the multiple gated transistor technique. In addition, the harmonic feedback effect in the configuration, which limits linearity improvement, is solved by employing an LC resonator as a load impedance. The solution is suggested by the high frequency analysis using the Volterra series. This circuit is implemented with a 0.13 μm CMOS process. Measurement results show a NF of 4.2 dB, an IIP3 of 34 dBm, and a gain of -4.3 dB at 7.2 mW of power consumption.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF resonators; UHF transistors; Volterra series; CD configuration; CMOS process; LC resonator; Volterra series; common-drain stage; frequency 0.4 GHz to 1 GHz; gain -4.3 dB; harmonic feedback effect; high frequency analysis; highly linear common-drain configuration; load impedance; multiple gated transistor technique; noise figure 4.2 dB; power 7.2 mW; power consumption; size 0.13 mum; third-order nonlinearity; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.1579
