SEU cross sections derived from a diffusion analysis

Author

Edmonds, Larry D.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

3207

Lastpage

3217

Abstract

A simple theoretical prediction of single-event upset (SEU) cross section versus linear energy transfer (LET) is derived from a diffusion analysis, and the result is compared to some real device curves. It was found that at least some real device curves show two regimes. One regime (high-LET) is characterized by a very good fit to the theoretical prediction, and the other (low-LET) is characterized by a very bad fit. The existence of a high-LET regime provides additional credibility for the increasingly popular postulate that diffusion has an important effect on the shape of the cross-sectional curve

Keywords

BIMOS integrated circuits; CMOS integrated circuits; carrier mobility; p-n junctions; semiconductor device models; CMOS devices; biMOS devices; cross-sectional curve; device curves; diffusion analysis; linear energy transfer; reverse bias p-n junction; semiconductor devices; single-event upset cross section; Energy exchange; Insulation life; Nonlinear equations; P-n junctions; Propulsion; Semiconductor devices; Shape; Single event upset; Space technology; Steady-state;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.552719

Filename

552719