A new lateral MOS-controlled thyristor

Author

Darwish, Mohmed N.

Author_Institution

AT&T Bell Lab., Reading, PA, USA

Volume

11

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

256

Lastpage

257

Abstract

A lateral MOS-controlled thyristor (LMCT) structure that uses an MOS gate to turn it both on and off is presented. The device structure offers improved maximum turn-off current capability and forward voltage drop. The former is achieved by using a DMOS transistor and a parasitic vertical p-n-p transistor, while the latter is achieved by eliminating a parasitic lateral p-n-p transistor in the conventional structure. The device utilizes the resurf technique to achieve high area efficiency, breakdown voltage, and reliability. Devices that have more than 250-V forward blocking capability were fabricated in dielectrically isolated silicon tubs using the standard bipolar-CMOS-DMOS process.<>

Keywords

metal-insulator-semiconductor devices; thyristors; 250 V; DMOS transistor; MOS gate; area efficiency; bipolar-CMOS-DMOS process; breakdown voltage; dielectrically isolated silicon tubs; forward blocking capability; forward voltage drop; lateral MOS-controlled thyristor; maximum turn-off current capability; parasitic lateral p-n-p transistor; parasitic vertical p-n-p transistor; reliability; resurf technique; Anodes; Breakdown voltage; Cathodes; Dielectric devices; Insulation; MOSFETs; Silicon; Telecommunication control; Thyristors; Turning;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.55272

Filename

55272