Solution-Processable Nanotube/Polymer Composite for High-Performance TFTs

Thin-film field-effect transistors (TFTs) are readily fabricated using a semiconductor composite that is solution processed under ambient conditions for the conduction channel. The composite comprises single-walled carbon nanotubes (SWCNTs) embedded in poly-9,9^´ dioctyl-fluorene-co-bithiophene. Carrier mobility values approaching 10 cm²V^-1s^-1 are obtained for the composite with relatively high SWCNT concentrations. When the SWCNT concentration is reduced for a large on/ off current ratio >; 10⁶, the mobility remains decent around 0.3 cm²V^-1s^-1. The resultant TFTs display remarkable environmental and operational reliability. Nanotube-based composites are therefore of significance in printed electronics owing to their simplicity in device fabrication and competitiveness in device performance.