• DocumentCode
    1267965
  • Title

    A new approach to the simulation of the coupled point defects and impurity diffusion

  • Author

    Rorris, Elias ; O´Brien, R.R. ; Morehead, F.F. ; Lever, R.F. ; Peng, J.P. ; Srinivasan, G.R.

  • Author_Institution
    IBM East Fishkill Lab., Hopewell Junction, NY, USA
  • Volume
    9
  • Issue
    10
  • fYear
    1990
  • fDate
    10/1/1990 12:00:00 AM
  • Firstpage
    1113
  • Lastpage
    1122
  • Abstract
    A program, named FINDPRO, has been developed which efficiently solves the coupled diffusion of point defects and multiple impurity species in two dimensions, using the finite difference method for space discretization. The program simulates an oxidation process step by interfacing with a boundary element oxidation program. It accounts for the effect of point defect recombination by subtracting the vacancy continuity equation from that of the interstitials and then using the point defect equilibrium relationship. The resulting equation is easier to handle numerically because the recombination term has been eliminated. Further, the point-defect-dopant interactions are essentially based on a steady-state approximation, but the correct defect gradients and concentrations in two or three dimensions relative to equilibrium are efficiently generated at a great saving in computational resources. The essential feature of the model used in this program is a realistic coupling between point defects and impurity species. The point defect fluxes depend on the concentrations of impurities and their gradients. Similarly, the impurity fluxes depend on the concentration and gradients of the point defects. This approach allows successful two-dimensional simulation of all major point-defect-mediated diffusion phenomena
  • Keywords
    difference equations; diffusion in solids; digital simulation; electronic engineering computing; oxidation; physics computing; point defects; semiconductor doping; FINDPRO; boundary element oxidation program; coupled point defects; emitter push effect; finite difference method; high concentration diffusion tail; impurity diffusion; model; multiple impurity species; oxidation process step; oxidation-enhanced diffusion; point defect equilibrium relationship; point defect recombination; point-defect-dopant interactions; space discretization; steady-state approximation; two-dimensional simulation; vacancy continuity equation; Boron; Equations; Finite difference methods; Impurities; Oxidation; Probability distribution; Semiconductor process modeling; Steady-state; Surface treatment; Tail;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.62735
  • Filename
    62735