A broadband 800 GHz Schottky balanced doubler

Author

Chattopadhyay, G. ; Schlecht, E. ; Gill, J. ; Martin, S. ; Maestrini, A. ; Pukala, D. ; Maiwald, F. ; Mehdi, I.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

12

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

117

Lastpage

118

Abstract

A broadband planar Schottky balanced doubler at 800 GHz has been designed and built. The design utilizes two Schottky diodes in a balanced configuration on a 12 μm thick gallium arsenide (GaAs) substrate as a supporting frame. This broadband doubler (designed for 735 GHz to 850 GHz) uses a split waveguide block and has a relatively simple, fast, and robust assembly procedure. The doubler achieved /spl ap/10% efficiency at 765 GHz, giving 1.1 mW of peak output power when pumped with about 9 mW of input power at room temperature.

Keywords

Schottky diodes; frequency multipliers; gallium arsenide; submillimetre wave circuits; submillimetre wave diodes; 1.1 mW; 10 percent; 12 micron; 735 to 850 GHz; 800 GHz; 9 mW; GaAs; GaAs substrate; Schottky balanced doubler; Schottky diodes; THF; broadband planar Schottky doubler; split waveguide block; submillimeter wave multipliers; Circuit simulation; Electromagnetic waveguides; Frequency; Gallium arsenide; Impedance matching; Laboratories; Power harmonic filters; Propulsion; Schottky diodes; Waveguide components;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/7260.993286

Filename

993286