DocumentCode
1267993
Title
Resistive SiC-MESFET mixer
Author
Andersson, Karl ; Eriksson, Johan ; Rorsman, Niklas ; Zirath, Herbert
Author_Institution
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
12
Issue
4
fYear
2002
fDate
4/1/2002 12:00:00 AM
Firstpage
119
Lastpage
121
Abstract
A single-ended silicon carbide resistive MESFET mixer was designed and characterized. The mixer has a minimum conversion loss of 10.2 dB and an input third order intercept point of 35.7 dBm at 3.3 GHz.
Keywords
MESFET circuits; equivalent circuits; intermodulation distortion; microwave field effect transistors; microwave mixers; semiconductor device models; silicon compounds; wide band gap semiconductors; 10.2 dB; 3.3 GHz; IMD; S-band; SiC; SiC MESFET mixer; conversion loss; device model; high-level mixer; intermodulation distortion; intermodulation intercept point; resistive MESFET mixer; single-ended mixer; small-signal equivalent circuit; wide bandgap semiconductors; Dielectric substrates; Dynamic range; Frequency; MESFETs; Microwave devices; Ohmic contacts; Photonic band gap; Power measurement; Silicon carbide; Voltage;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/7260.993287
Filename
993287
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