Title :
Resistive SiC-MESFET mixer
Author :
Andersson, Karl ; Eriksson, Johan ; Rorsman, Niklas ; Zirath, Herbert
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
4/1/2002 12:00:00 AM
Abstract :
A single-ended silicon carbide resistive MESFET mixer was designed and characterized. The mixer has a minimum conversion loss of 10.2 dB and an input third order intercept point of 35.7 dBm at 3.3 GHz.
Keywords :
MESFET circuits; equivalent circuits; intermodulation distortion; microwave field effect transistors; microwave mixers; semiconductor device models; silicon compounds; wide band gap semiconductors; 10.2 dB; 3.3 GHz; IMD; S-band; SiC; SiC MESFET mixer; conversion loss; device model; high-level mixer; intermodulation distortion; intermodulation intercept point; resistive MESFET mixer; single-ended mixer; small-signal equivalent circuit; wide bandgap semiconductors; Dielectric substrates; Dynamic range; Frequency; MESFETs; Microwave devices; Ohmic contacts; Photonic band gap; Power measurement; Silicon carbide; Voltage;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/7260.993287
