Title :
Feedback for multiband stabilization of CS and CG MESFET transistors
Author :
Hammad, H.F. ; Freundorfer, A.P. ; Antar, Y.M.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Queen´´s Univ., Kingston, Ont., Canada
fDate :
4/1/2002 12:00:00 AM
Abstract :
A new feedback scheme is used to achieve multiband unconditional stability in common source (CS) and common gate (CG) GaAs MESFET configurations. This technique extends the range of operation of both CG and CS beyond what is currently available. Results based on analytical formulations together with a description of the feedback design procedures are provided. Several CS and CG stabilized transistors were monolithically fabricated and tested.
Keywords :
III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; circuit feedback; circuit stability; field effect MMIC; gallium arsenide; microwave field effect transistors; GaAs; K/sub a/-band MMIC amplifiers; analytical formulations; common gate GaAs MESFET configurations; common source GaAs MESFET configurations; feedback design procedures; feedback scheme; monolithic fabrication; multiband stabilization; multiband unconditional stability; range of operation; Character generation; Cutoff frequency; Feedback; Gallium arsenide; Impedance; Loaded antennas; MESFETs; Military computing; Stability analysis; Testing;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/7260.993288
