DocumentCode :
1268009
Title :
The Monte Carlo method for semiconductor device and process modeling
Author :
Lugli, Paol
Author_Institution :
Dipartimento di Ingegneria Meccanica, Roma Univ., Italy
Volume :
9
Issue :
11
fYear :
1990
fDate :
11/1/1990 12:00:00 AM
Firstpage :
1164
Lastpage :
1176
Abstract :
A critical review of the Monte Carlo (MC) simulation as applied to semiconductor device and process modeling is presented. The general method is discussed, and some special features that can be very useful in particular situations are examined. It is shown that the MC method is a mature technique for modeling and can offer great advantages over more traditional approaches. Critical points are pointed out and analyzed. A variety of applications are then outlined
Keywords :
Monte Carlo methods; reviews; semiconductor device models; semiconductor technology; Monte Carlo method; process modeling; review; semiconductor device; Application software; Debugging; Integrodifferential equations; Monte Carlo methods; Neutrons; Nuclear power generation; Probability; Semiconductor devices; Testing; Uncertainty;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.62753
Filename :
62753
Link To Document :
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