Title :
Non-volatile memory device with true CMOS compatibility
Author :
Chang, L. ; Kuo, C. ; Hu, Chenming ; Kalnitsky, A. ; Bergemont, A. ; Francis, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
8/19/1999 12:00:00 AM
Abstract :
A low-cost non-volatile memory device using a standard CMOS process without additional processing steps is investigated for embedded applications. The cell consists of a PMOS transistor in which no electrical contact is made to the gate electrode and a series NMOS access transistor. Experimental data show that sufficient read current and disturb lifetime can be achieved. Data retention characteristics are also examined
Keywords :
CMOS memory circuits; EPROM; CMOS compatibility; PMOS transistor; data retention characteristics; disturb lifetime; embedded applications; low-cost memory device; nonvolatile memory device; read current; series NMOS access transistor; standard CMOS process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990983
