Title :
High-power mid-IR type II quantum-well lasers grown on compliant universal substrate [InGaAs/InP]
Author :
Kuo, C.H. ; Lin, Chih-Hsiang ; Thang, C.H. ; Pei, S.S. ; Zhou, Y.C.
Author_Institution :
Appl. Optoelectron. Inc., Sugar Land, TX, USA
fDate :
8/19/1999 12:00:00 AM
Abstract :
High-power mid-infra-red type II quantum-well lasers directly grown on compliant universal substrate with a lasing wavelength of 3.9 μm at 80 K have been realised. A peak output power of >320 mW per facet and differential quantum efficiency (DQE) of 7.2% are observed
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; 3.9 micrometre; 7.2 percent; 80 K; GaAs; InGaAs-InP; compliant universal substrate; differential quantum efficiency; high-power lasers; lasing wavelength; mid-infra-red lasers; peak output power; type II quantum-well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990966
