DocumentCode
1268268
Title
Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs
Author
Gaquière, C. ; Bollaert, S. ; Zaknoune, M. ; Cordier, Y. ; Theron, D. ; Crosnier, Y.
Author_Institution
Inst. d´´Electron. et de Microelectron. du Nord, Villeneuve d´´Ascq, France
Volume
35
Issue
17
fYear
1999
fDate
8/19/1999 12:00:00 AM
Firstpage
1489
Lastpage
1491
Abstract
For the first time the impact of indium composition influence on the power performances of metamorphic HEMTs with 0.25 μm gate length has been investigated at 60 GHz. These first power results at this frequency show that such HEMTs are very promising for power applications
Keywords
III-V semiconductors; millimetre wave field effect transistors; power HEMT; 0.25 micron; 60 GHz; III-V semiconductors; gate length; metamorphic HEMTs; power applications; power performance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990988
Filename
803633
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