• DocumentCode
    1268278
  • Title

    Transferred InP-based HBVs on glass substrate

  • Author

    Arscott, S. ; Mounaix, P. ; Lippens, D.

  • Author_Institution
    Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Technol. de Lille, Villeneuve d´´Ascq, France
  • Volume
    35
  • Issue
    17
  • fYear
    1999
  • fDate
    8/19/1999 12:00:00 AM
  • Firstpage
    1493
  • Lastpage
    1494
  • Abstract
    Transferred-substrate InP-based heterostructure barrier varactor devices are reported which have been fabricated on glass substrate following a novel epitaxial layer transfer technique utilising the negative photoresist SU-8. The transferred devices exhibit a leakage current of 4.5 A/cm2 at 10 V, a zero-bias capacitance of 1 fF/μm2 and a capacitance ratio of 5:1
  • Keywords
    III-V semiconductors; indium compounds; photoresists; semiconductor epitaxial layers; varactors; InP; SU-8 negative photoresist; capacitance ratio; epitaxial layer transfer; glass substrate; leakage current; transferred-substrate InP heterostructure barrier varactor device; zero-bias capacitance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990984
  • Filename
    803635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1268278