Design Techniques for Fully Integrated Switched-Capacitor DC-DC Converters

Author

Le, Hanh-Phuc ; Sanders, Seth R. ; Alon, Elad

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA

Volume

46

Issue

9

fYear

2011

Firstpage

2120

Lastpage

2131

Abstract

This paper describes design techniques to maximize the efficiency and power density of fully integrated switched-capacitor (SC) DC-DC converters. Circuit design methods are proposed to enable simplified gate drivers while supporting multiple topologies (and hence output voltages). These methods are verified by a proof-of-concept converter prototype implemented in 0.374 mm² of a 32 nm SOI process. The 32-phase interleaved converter can be configured into three topologies to support output voltages of 0.5 V-1.2 V from a 2 V input supply, and achieves 79.76% efficiency at an output power density of 0.86 W/mm² .

Keywords

DC-DC power convertors; capacitor switching; driver circuits; logic gates; silicon-on-insulator; switching convertors; 32-phase interleaved converter; SOI process; circuit design method; design techniques; fully integrated switched capacitor DC-DC converter; gate drivers; multiple topologies; power density; proof-of-concept converter prototype; voltage 0.5 V to 1.2 V; voltage 2 V; Capacitance; Capacitors; Logic gates; Resistance; Switches; Switching frequency; Topology; DC-DC conversion; design techniques; fully integrated converter; switched-capacitor; switching converter;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2011.2159054

Filename

5948387