A fast noise and Z-parameter transformations between common emitter and common base InP DHBT

Author

Xiong, Yong Zhong ; Ng, Geok-Ing ; Wang, Hong ; Tan, Chee Leong ; Fu, J.S.

Author_Institution

Microelectron. Center, Nanyang Technol. Univ., Singapore, Singapore

Volume

50

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

1109

Lastpage

1113

Abstract

A new approach has been developed that uses only a simple set of formulas to transform noise and Z-parameters between common emitter and common base configurations. This technique is based on the typical T-model of InP double-heterojunction bipolar transistor and calculated results agree with the experimental results, demonstrating that this approach is useful for many broad-band low-noise communication circuit designs

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor device models; semiconductor device noise; InP; InP double heterojunction bipolar transistor; T-model; Z-parameter transformation; broad-band low-noise communication circuit design; common base configuration; common emitter configuration; noise parameter transformation; Bipolar transistors; Broadband communication; Circuit noise; DH-HEMTs; Heterojunction bipolar transistors; Indium phosphide; Low-frequency noise; Noise figure; Optical noise; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.993413

Filename

993413