Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method

Author

Kanoh, Hiroshi ; Sugiura, Osamu ; Breddels, Paul A. ; Matsumura, Masakiyo

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

11

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

258

Lastpage

260

Abstract

The application of chemical-vapor-deposited (CVD) amorphous-silicon and silicon-nitride films to active layers of thin-film transistors on a glass substrate is discussed. The maximum process temperature was 485 degrees C. The maximum field-effect mobility and the typical on-off current ratio were more than 0.9 cm/sup 2//V-s and 10/sup 6/, respectively. Advantages of applying the fully plasma-free CVD method in the amorphous-silicon thin-film transistor process are discussed.<>

Keywords

amorphous semiconductors; carrier mobility; chemical vapour deposition; elemental semiconductors; semiconductor growth; silicon; silicon compounds; thin film transistors; 485 degC; amorphous Si-SiN thin film transistors; field-effect mobility; glass substrate; on-off current ratio; plasma-free CVD; process temperature; Chemical vapor deposition; Glass; Hydrogen; Plasma applications; Plasma chemistry; Plasma displays; Plasma temperature; Silicon compounds; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.55273

Filename

55273