• DocumentCode
    1268364
  • Title

    A 113.92 \\sim 118.08 GHz Injection-Locked Frequency Divider With Triple-Split-Inductor Technique

  • Author

    Lin, Bo-Yu ; Liu, Shen-Iuan

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    21
  • Issue
    8
  • fYear
    2011
  • Firstpage
    436
  • Lastpage
    438
  • Abstract
    An injection-locked frequency divider (ILFD) which operates in F-band (90 ~ 140 GHz) is proposed. The proposed ILFD using a triple-split-inductor technique achieves a high oscillation frequency. The ILFD is fabricated in a 65 nm CMOS process. The measured locking range is 113.92-to-118.08 GHz. It consumes 8.4 mW from a 1.2 V power supply without biasing circuit and buffers and the core circuits occupies 0.32 × 0.25 mm2.
  • Keywords
    CMOS integrated circuits; circuit oscillations; frequency dividers; microwave bipolar transistors; CMOS process; F-band; frequency 113.92 GHz to 118.08 GHz; injection-locked frequency divider; locking range; oscillation frequency; power 8.4 mW; size 65 nm; triple-split-inductor technique; voltage 1.2 V; CMOS integrated circuits; Capacitance; Frequency conversion; Frequency measurement; Oscillators; Transconductance; Transistors; Distributed-LC; F-band; frequency divider; injection-locked frequency divider (ILFD); locking range; millimeter-wave; oscillator;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2011.2160161
  • Filename
    5948394