A novel drain current I-V model for MESFET

Author

Ooi, Ban-Leong ; Ma, J.Y. ; Leong, M.S.

Author_Institution

Electr. & Comput. Eng. Dept., Nat. Univ. of Singapore, Singapore

Volume

50

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

1188

Lastpage

1192

Abstract

The conventional approach for modeling the dc I-V characteristics of a MESFET transistor usually adopts the hyperbolic tangent dependence on V_ds. On the contrary, our new empirical model describes the device drain current as a polynomial of effective gate-source voltage V_eff. The derived model is capable of accurately modelling the subthreshold effect and the device current-voltage behavior at different operating regions, in particular, the device operation around the pinchoff region. Measured and modeled results of a 0.5-μm gatelength MESFET device are compared and good agreement has been obtained. Comparisons between the proposed model, Curtice model, Chalmers model, and Parker model are also made in this paper. In addition, a single-stage class-AB amplifier was built with a commercial high-power MESFET transistor to verify the new model

Keywords

Schottky gate field effect transistors; microwave field effect transistors; semiconductor device models; 0.5 micron; MESFET; drain current I-V model; effective gate-source voltage; large-signal model; microwave FETs; nonlinear model; pinchoff region; single-stage class-AB amplifier; subthreshold effect; Data mining; Equations; FETs; High power amplifiers; MESFETs; Packaging; Polynomials; Semiconductor device modeling; Software design; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.993423

Filename

993423