• DocumentCode
    1268510
  • Title

    Fourier method modeling of semiconductor devices

  • Author

    Axelrad, Valery

  • Author_Institution
    Lehrstuhl fuer Intergrerte Schaltungen, Tech. Univ. Munchen, West Germany
  • Volume
    9
  • Issue
    11
  • fYear
    1990
  • fDate
    11/1/1990 12:00:00 AM
  • Firstpage
    1225
  • Lastpage
    1237
  • Abstract
    A high-order approach to a numerical modeling of semiconductor devices is presented. The method combines the classical Fourier-series Galerkin procedure, a special matrix calculus, and fast numerical pseudospectral techniques. The proposed algorithm renders the exact solution (machine precision) of the semiconductor equations in the closed form of a trigonometric polynomial. The condition number of the diagonally dominant discrete equations is near unity. As a consequence, a highly accurate solution is achieved at moderate computer costs. The method has been implemented for one- and two-dimensional device models. Properties of the procedure are demonstrated with examples
  • Keywords
    semiconductor device models; series (mathematics); 1D device models; Fourier-series Galerkin procedure; fast numerical pseudospectral techniques; matrix calculus; numerical modeling; semiconductor devices; semiconductor equations; trigonometric polynomial; two-dimensional device models; Bipolar transistors; Costs; Integral equations; Jacobian matrices; Mesh generation; Moment methods; Numerical models; Polynomials; Semiconductor devices; Semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.62760
  • Filename
    62760