DocumentCode
1268928
Title
Operation and theoretical analysis of the multiple asymmetric coupled quantum-well light modulator in the n-i-n configuration
Author
Goldys, Ewa M. ; Nott, Graeme ; Tansley, Trevor L. ; Henini, M. ; Pate, M.A. ; Hill, G.
Author_Institution
Semicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, NSW, Australia
Volume
33
Issue
7
fYear
1997
fDate
7/1/1997 12:00:00 AM
Firstpage
1084
Lastpage
1088
Abstract
Results of optical measurements on a multiple asymmetric quantum-well device in the n-i-n configuration that demonstrate for the first time its applicability as a light modulator are presented. The contrast ratio at the fundamental heavy hole exciton resonance is close to 2 for small operating voltage of around 3.5 V. Dual wavelength operation was proved possible with a weaker contrast ratio at 1.68 eV. The energy levels and the absorption coefficient are calculated in the envelope function approximation within the eight-band k×p model with electric field-dependent transition energies in agreement with theory. Weak deviations from the step-like character of the calculated absorption spectrum are explained by the wavevector dependence of the optical matrix element
Keywords
III-V semiconductors; absorption coefficients; aluminium compounds; band structure; electro-optical modulation; excitons; gallium arsenide; k.p calculations; quantum confined Stark effect; semiconductor quantum wells; 1.68 eV; 3.5 V; AlGaAs-GaAs; AlGaAs-GaAs MQW; absorption coefficient; contrast ratio; dual wavelength operation; eight-band k×p model; electric field-dependent transition energies; energy levels; envelope function approximation; fundamental heavy hole exciton resonance; multiple asymmetric coupled quantum-well light modulator; n-i-n configuration; operating voltage; optical matrix element; optical measurements; quantum confined Stark effect; step-like character; wavevector dependence; Absorption; Energy states; Excitons; Optical devices; Optical modulation; Quantum well devices; Resonance; Time measurement; Voltage; Wavelength measurement;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.594869
Filename
594869
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