Title :
Extremely low-leakage GaAs P-i-N junctions and memory capacitors grown by atomic layer epitaxy
Author :
Bedair, Salah M. ; McDermott, B.T. ; Reid, K.G. ; Neudeck, Philip G. ; Cooper, James A., Jr. ; Melloch, Michael R.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
Leakage-limited P-i-N-i-P charge storage capacitors demonstrate a 1/e storage time of over 30 min at room temperature, corresponding to a current density of less than 50 pA/cm/sup 2/ at 1-V reverse bias for a 160*140- mu m/sup 2/ capacitor. These storage times are comparable to those of the best MBE-grown structures reported to date. For the diodes tested, which range in size from 4*10/sup -4/ to 4.9*10/sup -5/ cm/sup 2/, leakage is dominated by generation around the etched diode perimeter. The relatively small bulk generation current is evidence of the high quality of the atomic layer epitaxy (ALE)-grown junctions.<>
Keywords :
III-V semiconductors; atomic layer epitaxial growth; capacitors; current density; gallium arsenide; leakage currents; p-i-n diodes; semiconductor growth; semiconductor storage; ALE; GaAs; P-i-N junctions; P-i-N-i-P charge storage capacitors; atomic layer epitaxy; bulk generation current; current density; diodes; leakage currents; memory capacitors; storage time; Atomic layer deposition; Capacitors; Current density; Etching; Gallium arsenide; Molecular beam epitaxial growth; P-i-n diodes; PIN photodiodes; Temperature; Testing;
Journal_Title :
Electron Device Letters, IEEE
