Title :
Simulation of a MOS transistor with spatially nonuniform channel parameters
Author :
Booth, Richard ; White, Marvin
Author_Institution :
Sherman Fairchild Lab., Lehigh Univ., Bethlehem, PA, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
A simulation technique is described for the MOS transistor with spatially nonuniform channel parameters, such as voltage, channel width, oxide thickness, flatband voltage, and interface state density. The model is one-dimensional and relies on a charge-sheet description of the inversion layer. Simulation results are shown for the case of a transistor with a nonuniform profile of trapped negative charge
Keywords :
digital simulation; electronic engineering computing; insulated gate field effect transistors; semiconductor device models; MOS transistor; MOSFET; channel width; charge-sheet description; flatband voltage; interface state density; inversion layer; nonuniform profile; oxide thickness; simulation technique; spatially nonuniform channel parameters; trapped negative charge; voltage; Dielectrics and electrical insulation; Electrodes; Electron traps; Interface states; MOSFET circuits; Plasmas; Secondary generated hot electron injection; Semiconductor process modeling; Stress; Voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
