Title :
An AlGaAs/GaAs heterostructure-emitter bipolar transistor
Author :
Wu, X. ; Wang, Y.Q. ; Luo, L.F. ; Yang, Edward S.
Author_Institution :
Microelectron. Sci. Lab., Columbia Univ., New York, NY, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
An AlGaAs/GaAs heterostructure-emitter bipolar transistor using separate carrier injection and confinement is discussed. A common-emitter current gain of 28 with BV/sub CEO/=15 V was obtained at a base doping level of 1*10/sup 19//cm/sup 3/. No spacer layer was inserted in the structure. This transistor combines the merits of homojunction transistors and regular heterostructure bipolar transistors (HBTs) and is simple to fabricate.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; AlGaAs-GaAs; Gummel plots; carrier confinement; carrier injection; common-emitter current gain; heterostructure-emitter bipolar transistor; Bipolar transistors; Carrier confinement; Doping; Electron emission; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Microwave transistors; Silicon; Spontaneous emission;
Journal_Title :
Electron Device Letters, IEEE
