DocumentCode
1269645
Title
An AlGaAs/GaAs heterostructure-emitter bipolar transistor
Author
Wu, X. ; Wang, Y.Q. ; Luo, L.F. ; Yang, Edward S.
Author_Institution
Microelectron. Sci. Lab., Columbia Univ., New York, NY, USA
Volume
11
Issue
6
fYear
1990
fDate
6/1/1990 12:00:00 AM
Firstpage
264
Lastpage
266
Abstract
An AlGaAs/GaAs heterostructure-emitter bipolar transistor using separate carrier injection and confinement is discussed. A common-emitter current gain of 28 with BV/sub CEO/=15 V was obtained at a base doping level of 1*10/sup 19//cm/sup 3/. No spacer layer was inserted in the structure. This transistor combines the merits of homojunction transistors and regular heterostructure bipolar transistors (HBTs) and is simple to fabricate.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; AlGaAs-GaAs; Gummel plots; carrier confinement; carrier injection; common-emitter current gain; heterostructure-emitter bipolar transistor; Bipolar transistors; Carrier confinement; Doping; Electron emission; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Microwave transistors; Silicon; Spontaneous emission;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.55275
Filename
55275
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