DocumentCode :
1269736
Title :
Electrical Characteristics of \\hbox {Al}_{2} \\hbox {O}_{3}/\\hbox {TiO}_{2}/\\hbox {Al}_{2}\\hbox {O}_{3} Nanolaminate MOS Capacitor on
Author :
Lee, Ko-Tao ; Huang, Chih-Fang ; Gong, Jeng ; Liou, Bo-Heng
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
30
Issue :
9
fYear :
2009
Firstpage :
907
Lastpage :
909
Abstract :
In this letter, electrical characteristics of nanolaminate Al2 O3/TiO2/Al2O3 on p-GaN MOS capacitor with and without PMA and (NH4)2 SX treatments were investigated. I-V and C-V characteristics were improved by both PMA and (NH4)2SX treatments. The leakage-current densities can be improved to 3.0 ?? 10-8 and 2.2 ?? 10-8 A/cm2 at ??1 V, respectively. Almost an ideal C-V curve, the effective dielectric constant of 12.1 and the averaged Dit value of 4.3 ?? 1011 eV-1 ?? cm-2 were obtained.
Keywords :
MOS capacitors; alumina; annealing; current density; laminates; nanostructured materials; nanotechnology; permittivity; surface treatment; titanium compounds; (NH4)2SX treatment; Al2O3-TiO2-Al2O3; Al2O3/TiO2/Al2O3 nanolaminate MOS capacitor; GaN; PMA; effective dielectric constant; leakage-current density; post metallization annealing; $(hbox{NH}_{4})_{2}hbox{S}_{X}$; III–V semiconductor; post metallization annealing (PMA); thin dielectric films;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2026295
Filename :
5184888
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1269736
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