DocumentCode
1269755
Title
A New Buried-Oxide-In-Drift-Region Trench MOSFET With Improved Breakdown Voltage
Author
Saxena, Raghvendra Sahai ; Kumar, M. Jagadesh
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India
Volume
30
Issue
9
fYear
2009
Firstpage
990
Lastpage
992
Abstract
In this letter, we propose a new trench-gate power MOSFET with buried oxide in its drift region that shows an improvement in the breakdown performance as compared to the conventional trench device due to a reduction in the vertical electric field. In addition, the proposed device shows about linear relation between the BV and R ON as compared to the 2.5th power relation in the conventional device.
Keywords
power MOSFET; semiconductor device breakdown; breakdown voltage; buried-oxide-in-drift-region; trench-gate power MOSFET; Breakdown voltage (BV); buried oxide (BOX); on-resistance; power MOSFET; trench gate;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2026918
Filename
5184890
Link To Document