DocumentCode :
1270214
Title :
A 77 GHz Low LO Power Mixer With a Split Self-Driven Switching Cell in 65 nm CMOS Technology
Author :
Kim, Seong-Kyun ; Cui, Chenglin ; Huang, Guochi ; Kim, SoYoung ; Kim, Byung-Sung
Author_Institution :
Coll. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea
Volume :
22
Issue :
9
fYear :
2012
Firstpage :
480
Lastpage :
482
Abstract :
A low LO power mixer with high gain by using a split self-driven switching cell for automotive applications at 77 GHz is presented. By splitting the switching cell, the required LO power is reduced and the VCO has less capacitive loading. The mixer has a peak conversion gain of 6.8 dB and the input 1 dB compression point is 7 dBm at LO power of 5 dBm. The chip is fabricated in 65 nm CMOS technology and the chip size including a Marchand balun is 790 μm × 590 μm. The total power consumption is 3 mW from a 1.2 V supply.
Keywords :
CMOS integrated circuits; baluns; millimetre wave mixers; voltage-controlled oscillators; CMOS technology; Marchand balun; VCO; automotive application; compression point; frequency 77 GHz; low LO power mixer; noise figure 1 dB; noise figure 6.8 dB; power 3 mW; power consumption; split self-driven switching cell; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Gain; Mixers; Radar; Radio frequency; Switches; 77 GHz down-converter; Automotive radar; CMOS integrated circuit; mixers; phased-array;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2012.2213076
Filename :
6279473
Link To Document :
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