A 77 GHz Low LO Power Mixer With a Split Self-Driven Switching Cell in 65 nm CMOS Technology

Author

Kim, Seong-Kyun ; Cui, Chenglin ; Huang, Guochi ; Kim, SoYoung ; Kim, Byung-Sung

Author_Institution

Coll. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea

Volume

22

Issue

9

fYear

2012

Firstpage

480

Lastpage

482

Abstract

A low LO power mixer with high gain by using a split self-driven switching cell for automotive applications at 77 GHz is presented. By splitting the switching cell, the required LO power is reduced and the VCO has less capacitive loading. The mixer has a peak conversion gain of 6.8 dB and the input 1 dB compression point is 7 dBm at LO power of 5 dBm. The chip is fabricated in 65 nm CMOS technology and the chip size including a Marchand balun is 790 μm × 590 μm. The total power consumption is 3 mW from a 1.2 V supply.

Keywords

CMOS integrated circuits; baluns; millimetre wave mixers; voltage-controlled oscillators; CMOS technology; Marchand balun; VCO; automotive application; compression point; frequency 77 GHz; low LO power mixer; noise figure 1 dB; noise figure 6.8 dB; power 3 mW; power consumption; split self-driven switching cell; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Gain; Mixers; Radar; Radio frequency; Switches; 77 GHz down-converter; Automotive radar; CMOS integrated circuit; mixers; phased-array;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2012.2213076

Filename

6279473