DocumentCode :
1270248
Title :
Fundamental Benefits of the Staggered Geometry for Organic Field-Effect Transistors
Author :
Kim, Chang Hyun ; Bonnassieux, Yvan ; Horowitz, Gilles
Author_Institution :
LPICM, CNRS, Palaiseau, France
Volume :
32
Issue :
9
fYear :
2011
Firstpage :
1302
Lastpage :
1304
Abstract :
In this letter, decisive advantages of the staggered-type organic field-effect transistors (OFETs) over the coplanar type are elucidated by 2-D device simulation. It is found that the charge transport in the channel is not limited by the contact electrode in staggered OFETs, whereas coplanar OFETs show strongly contact-limited behavior. This dissimilarity originates from the continuity (staggered) or discontinuity (coplanar) of the carrier concentration at the channel ends, which is directly connected to the channel potential profile. The calculated current-voltage curves also support these arguments as the current in coplanar OFETs follows the contact-limited transistor model.
Keywords :
carrier density; geometry; organic field effect transistors; semiconductor device models; 2D device simulation; carrier concentration; channel potential profile; contact-limited transistor model; coplanar OFET; current-voltage curves; staggered geometry; staggered-type organic field-effect transistors; Contact resistance; Electric potential; Geometry; Logic gates; OFETs; Pentacene; 2-D simulation; Contact resistance; device geometry; organic field-effect transistors (OFETs);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2160249
Filename :
5951732
Link To Document :
بازگشت