• DocumentCode
    1270248
  • Title

    Fundamental Benefits of the Staggered Geometry for Organic Field-Effect Transistors

  • Author

    Kim, Chang Hyun ; Bonnassieux, Yvan ; Horowitz, Gilles

  • Author_Institution
    LPICM, CNRS, Palaiseau, France
  • Volume
    32
  • Issue
    9
  • fYear
    2011
  • Firstpage
    1302
  • Lastpage
    1304
  • Abstract
    In this letter, decisive advantages of the staggered-type organic field-effect transistors (OFETs) over the coplanar type are elucidated by 2-D device simulation. It is found that the charge transport in the channel is not limited by the contact electrode in staggered OFETs, whereas coplanar OFETs show strongly contact-limited behavior. This dissimilarity originates from the continuity (staggered) or discontinuity (coplanar) of the carrier concentration at the channel ends, which is directly connected to the channel potential profile. The calculated current-voltage curves also support these arguments as the current in coplanar OFETs follows the contact-limited transistor model.
  • Keywords
    carrier density; geometry; organic field effect transistors; semiconductor device models; 2D device simulation; carrier concentration; channel potential profile; contact-limited transistor model; coplanar OFET; current-voltage curves; staggered geometry; staggered-type organic field-effect transistors; Contact resistance; Electric potential; Geometry; Logic gates; OFETs; Pentacene; 2-D simulation; Contact resistance; device geometry; organic field-effect transistors (OFETs);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2011.2160249
  • Filename
    5951732