DocumentCode
1270248
Title
Fundamental Benefits of the Staggered Geometry for Organic Field-Effect Transistors
Author
Kim, Chang Hyun ; Bonnassieux, Yvan ; Horowitz, Gilles
Author_Institution
LPICM, CNRS, Palaiseau, France
Volume
32
Issue
9
fYear
2011
Firstpage
1302
Lastpage
1304
Abstract
In this letter, decisive advantages of the staggered-type organic field-effect transistors (OFETs) over the coplanar type are elucidated by 2-D device simulation. It is found that the charge transport in the channel is not limited by the contact electrode in staggered OFETs, whereas coplanar OFETs show strongly contact-limited behavior. This dissimilarity originates from the continuity (staggered) or discontinuity (coplanar) of the carrier concentration at the channel ends, which is directly connected to the channel potential profile. The calculated current-voltage curves also support these arguments as the current in coplanar OFETs follows the contact-limited transistor model.
Keywords
carrier density; geometry; organic field effect transistors; semiconductor device models; 2D device simulation; carrier concentration; channel potential profile; contact-limited transistor model; coplanar OFET; current-voltage curves; staggered geometry; staggered-type organic field-effect transistors; Contact resistance; Electric potential; Geometry; Logic gates; OFETs; Pentacene; 2-D simulation; Contact resistance; device geometry; organic field-effect transistors (OFETs);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2160249
Filename
5951732
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