DocumentCode
1270502
Title
High third-order-intercept series-FET driver power amplifier [Application Notes]
Author
Bahl, Inder J. ; Durham, Art
Author_Institution
Cobham, Roanoke, VA, USA
Volume
10
Issue
5
fYear
2009
fDate
8/1/2009 12:00:00 AM
Firstpage
114
Lastpage
118
Abstract
A high TOI C-band MMIC amplifier has been developed using Cobham´s multifunction self-aligned gate MESFET technology. The medium-power amplifier demonstrated 48-dBm OTOI, greater than 0.6 W saturated power, and 45% PAE performance. This outstanding TOI performance was only possible because of the SF configuration. The amplifier has approximately 3-dB higher gain than a single FET, which also results in higher PAE.
Keywords
MESFET integrated circuits; MMIC power amplifiers; MESFET technology; MMIC power amplifier; power added efficiency; series-FET driver power amplifier; third-order-intercept; Art; Capacitors; Driver circuits; FETs; High power amplifiers; Impedance; Linearity; Nonlinear distortion; Predistortion; Pulse amplifiers;
fLanguage
English
Journal_Title
Microwave Magazine, IEEE
Publisher
ieee
ISSN
1527-3342
Type
jour
DOI
10.1109/MMM.2009.932862
Filename
5185533
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