Title :
High third-order-intercept series-FET driver power amplifier [Application Notes]
Author :
Bahl, Inder J. ; Durham, Art
Author_Institution :
Cobham, Roanoke, VA, USA
fDate :
8/1/2009 12:00:00 AM
Abstract :
A high TOI C-band MMIC amplifier has been developed using Cobham´s multifunction self-aligned gate MESFET technology. The medium-power amplifier demonstrated 48-dBm OTOI, greater than 0.6 W saturated power, and 45% PAE performance. This outstanding TOI performance was only possible because of the SF configuration. The amplifier has approximately 3-dB higher gain than a single FET, which also results in higher PAE.
Keywords :
MESFET integrated circuits; MMIC power amplifiers; MESFET technology; MMIC power amplifier; power added efficiency; series-FET driver power amplifier; third-order-intercept; Art; Capacitors; Driver circuits; FETs; High power amplifiers; Impedance; Linearity; Nonlinear distortion; Predistortion; Pulse amplifiers;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMM.2009.932862
