• DocumentCode
    1270766
  • Title

    High-frequency modeling of current sensors [of IGBT VSI]

  • Author

    Pankau, Jeff ; Leggate, David ; Schlegel, David W. ; Kerkman, Russel J. ; Skibiniski, Gary L.

  • Author_Institution
    Standard Drives Div., Rockwell Autom.-Allen-Bradley Co. Inc., Mequon, WI, USA
  • Volume
    35
  • Issue
    6
  • fYear
    1999
  • Firstpage
    1374
  • Lastpage
    1382
  • Abstract
    Reflected-wave transient voltages that result from fast insulated gate bipolar transistor voltage-source inverters have received considerable investigation. Modeling, simulation and attenuation of these transients require sophisticated motor and cable models. Most drive suppliers now provide combinations of passive and active solutions to mitigate the adverse effects of overvoltage stress, however, the costs of the passive solutions often exceed the cost of the drive. Another aspect of low-risetime devices, not examined to the extent of the overvoltage problem, is the resulting current from traveling waves. Current sensor fidelity limits the ability of modern drives to detect peak current and can result in current feedback distortion. This paper presents recent research into the response, modeling and construction of Hall-effect current sensors. Models for Hall-effect current sensors are introduced and compared. Experimental and simulation results demonstrate the complexity of the common current sensors employed in modern adjustable-speed drives. A comparison of the sensor response and the model´s prediction demonstrates the difficulty associated with accurate current detection. Finally, the paper presents design guidelines to reduce the corrupting influence of high-frequency differential and common-mode currents
  • Keywords
    DC-AC power convertors; Hall effect transducers; electric current measurement; electric sensing devices; insulated gate bipolar transistors; invertors; power bipolar transistors; transients; adjustable-speed drives; common-mode currents; current sensors; design guidelines; fast insulated gate bipolar transistor voltage-source inverters; high-frequency differential currents; high-frequency modeling; overvoltage stress; reflected-wave transient voltages; sensor response; Attenuation; Costs; Feedback; Guidelines; Insulated gate bipolar transistors; Inverters; Predictive models; Stress; Variable speed drives; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Industry Applications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-9994
  • Type

    jour

  • DOI
    10.1109/28.806052
  • Filename
    806052