Improvement in hot carrier lifetime as a function of N/sub 2/ ion implantation before gate oxide growth in deep submicron NMOS devices

Author

Guarin, Fernando J. ; Rauch, Stewart E., III ; La Rosa, G. ; Brelsford, Kevin

Author_Institution

Semicond. Res. Dev. Center, IBM Corp., Hopewell Junction, NY, USA

Volume

20

Issue

12

fYear

1999

Firstpage

602

Lastpage

604

Abstract

A detailed study of the impact of N/sub 2/ ion implantation (I/I) dose before gate oxide growth to hot carrier (HC) reliability of NMOSFETs is reported here, Improvements of more than 20/spl times/ in HC lifetime were achieved by the introduction of sufficiently high N/sub 2/ (I/I) doses. It was found that for NMOSFETs, the HC degradation correlates inversely to the initial interface state density introduced by the N/sub 2/ I/I process. This process-driven HC lifetime improvement does not require extensive post-metal anneals for HC lifetime improvements in advanced CMOS multilevel metal-dielectric processes.

Keywords

MOSFET; carrier lifetime; hot carriers; interface states; ion implantation; semiconductor device reliability; CMOS multilevel metal-dielectric process; N/sub 2/; N/sub 2/ ion implantation; deep submicron NMOSFET; gate oxide growth; hot carrier lifetime; interface state density; reliability; CMOS technology; Degradation; Hot carriers; Interface states; Ion implantation; MOS devices; MOSFET circuits; Oxidation; Stress; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.806098

Filename

806098