A novel planarized, silicon trench sidewall oxide-merged p-i-n Schottky (TSOX-MPS) rectifier

Author

Gupta, Rajesh N. ; Min, W.G. ; Chow, T.P.

Author_Institution

Rensselaer Polytech. Inst., Troy, NY, USA

Volume

20

Issue

12

fYear

1999

Firstpage

627

Lastpage

629

Abstract

A new high-voltage rectifier structure, a planarized silicon Trench Sidewall OXide Merged P-i-n Schottky (TSOX-MPS) rectifier is described. This TSOX-MPS rectifier exhibits a far superior switching performance, compared to the p-i-n rectifier, for the same reverse leakage current and on-state voltage. In addition, for the same lifetime, the reverse leakage current of the TSOX-MPS rectifier is equal to that of the p-i-n rectifier, not so much sensitive than the MPS rectifier does. These aspects of the TSOX-MPS rectifier have been experimentally verified, by fabrication of 400 V TSOX-MPS rectifiers.

Keywords

Schottky diodes; elemental semiconductors; leakage currents; p-i-n diodes; power semiconductor diodes; silicon; solid-state rectifiers; 400 V; HV rectifier structure; Si; TSOX-MPS rectifiers; high-voltage rectifier; onstate voltage; p-i-n Schottky rectifier; planarized Si trench sidewall oxide-merged structure; reverse leakage current; switching performance; Current density; Etching; Fabrication; Leakage current; PIN photodiodes; Power electronics; Rectifiers; Schottky barriers; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.806106

Filename

806106