Fabrication of Very-High-Aspect-Ratio Microstructures in Complex Patterns by Photoelectrochemical Etching

We have fabricated very-high-aspect-ratio (VHAR) silicon and metal microstructures in complex geometric patterns. The recently developed surfactant-added tetramethylammonium hydroxide etching allows the formation of V-grooves in any pattern, i.e., not limited by the crystal direction, on a silicon surface. As the resulting sharp pits allow very deep photoelectrochemical etching, VHAR silicon microstructures (4-μm-wide and over-300-μm -deep trenches) are successfully fabricated in complex patterns (spiral and zigzag demonstrated), overcoming the prevailing limitations of simple pores and straight trenches. Furthermore, by filling the VHAR silicon mold with nickel and removing the silicon, high-aspect-ratio metal microstructures of complex patterns are also obtained. These VHAR microstructures in complex patterns, which are structurally much stronger than the simple posts and straight plates, overcome the stiction problem even when densely populated.