DocumentCode
1271276
Title
IMPATT operation below the avalanche frequency
Author
Luy, J.-F.
Author_Institution
Daimler Benz Res., Ulm, Germany
Volume
26
Issue
23
fYear
1990
Firstpage
1960
Lastpage
1962
Abstract
Very high output powers are obtained with double drift IMPATT diodes at current densities which shift the avalanche frequency above the oscillation frequency: 30-40 W pulsed around 90 GHz. This operation mode cannot be explained in terms of the conventional READ theory. A numerical large signal simulation shows that avalanche multiplication over the whole diode takes place. At high current densities the double drift device behaves like a pin diode without the unfavourable breakdown of the ionisation process in the centre of the diode.
Keywords
IMPATT diodes; elemental semiconductors; semiconductor device models; silicon; 30 to 40 W; 90 GHz; EHF; IMPATT operation; MM-wave devices; Si; avalanche resonance frequency; double drift IMPATT diodes; high current densities; high output powers; numerical large signal simulation; operation below avalanche frequency; operation mode; whole diode avalanche multiplication;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901268
Filename
59525
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