Title :
Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices
Author :
Khandelwal, Sourabh ; Chauhan, Yogesh Singh ; Fjeldly, Tor A.
Author_Institution :
Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
Abstract :
A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high electron mobility transistor devices is presented. We have developed a precise analytical method to calculate the Fermi-level position Ef from a consistent solution of Schrodinger´s and Poisson´s equations in the quantum well, considering the two important energy levels. The accuracy of our Ef calculation is on the order of femto-volts for the full range of bias voltage. The SP calculated from Ef is used to derive an analytical model for intrinsic charges in these devices. The model is in excellent agreement with experimental data.
Keywords :
Fermi level; III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; electron mobility; gallium compounds; high electron mobility transistors; quantum wells; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; Fermi-level position; HEMT devices; Poisson equations; SP-based analytical model; Schrodinger equations; energy levels; high electron mobility transistor device; intrinsic charges; quantum well; surface potential-based analytical model; Accuracy; Aluminum gallium nitride; Analytical models; Data models; Gallium nitride; HEMTs; Numerical models; AlGaN/GaN high electron mobility transistor (HEMT); compact model; modulation-doped field-effect transistor (MODFET);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2209654
