Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

Author

Khandelwal, Sourabh ; Chauhan, Yogesh Singh ; Fjeldly, Tor A.

Author_Institution

Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Trondheim, Norway

Volume

59

Issue

10

fYear

2012

Firstpage

2856

Lastpage

2860

Abstract

A surface potential (SP)-based analytical model for intrinsic charges in AlGaN/GaN high electron mobility transistor devices is presented. We have developed a precise analytical method to calculate the Fermi-level position E_f from a consistent solution of Schrodinger´s and Poisson´s equations in the quantum well, considering the two important energy levels. The accuracy of our E_f calculation is on the order of femto-volts for the full range of bias voltage. The SP calculated from E_f is used to derive an analytical model for intrinsic charges in these devices. The model is in excellent agreement with experimental data.

Keywords

Fermi level; III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; electron mobility; gallium compounds; high electron mobility transistors; quantum wells; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; Fermi-level position; HEMT devices; Poisson equations; SP-based analytical model; Schrodinger equations; energy levels; high electron mobility transistor device; intrinsic charges; quantum well; surface potential-based analytical model; Accuracy; Aluminum gallium nitride; Analytical models; Data models; Gallium nitride; HEMTs; Numerical models; AlGaN/GaN high electron mobility transistor (HEMT); compact model; modulation-doped field-effect transistor (MODFET);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2209654

Filename

6280656