Title :
Surface-Charge-Collection-Enhanced High-Sensitivity High-Stability Silicon Photodiodes for DUV and VUV Spectral Ranges
Author :
Shi, L. ; Nihtianov, S. ; Haspeslagh, L. ; Scholze, F. ; Gottwald, A. ; Nanver, L.K.
Author_Institution :
Delft Univ. of Technol., Delft, Netherlands
Abstract :
The electrical and optical performance of silicon pure-boron (Pure-B) diode is investigated in relationship to the thermal processing used after formation of the PureB chemical-vapor-deposition layer that creates otherwise extremely ultrashallow p+-n junctions. The measured responsivity of PureB diodes is high and stable in the deep ultraviolet (UV) and vacuum UV spectral ranges, covering the spectrum from 220 down to 50 nm. Results are presented, showing that a very high surface charge collection efficiency can be obtained owing to a strong surface electric field resulting from a doping profile that is steep and without roll-off right up to the Si surface.
Keywords :
boron; chemical vapour deposition; doping profiles; elemental semiconductors; photodiodes; silicon; DUV spectral range; Si; Si:B; VUV spectral range; chemical vapor deposition layer; deep ultraviolet spectral range; doping profile; high-sensitivity high-stability silicon photodiodes; high-surface charge collection efficiency; silicon pure-boron diode responsivity; silicon surface; surface charge collection-enhanced photodiodes; surface electric field; thermal processing; vacuum UV spectral range; wavelength 220 nm to 50 nm; Boron; Optical surface waves; Photodiodes; Silicon; Surface treatment; Ultraviolet sources; Deep ultraviolet (UV) (DUV); degradation; responsivity; silicon photodiode; ultrashallow junction; vacuum UV (VUV);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2210225
