• DocumentCode
    1271570
  • Title

    Self-Heating Effect on Modal Gain of 1.3- \\mu\\hbox {m} InAs/GaAs QD Lasers With Different mmb{p}

  • Author

    Wang, Rui ; Yoon, Soon Fatt ; Zhao, Han Xue ; Liu, Chong Yang

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    3
  • Issue
    4
  • fYear
    2011
  • Firstpage
    713
  • Lastpage
    717
  • Abstract
    The self-heating effect in 1.3-μm InAs/GaAs quantum dot (QD) lasers with different doping levels has been investigated by comparing the characteristics of the threshold current density (Jth) and modal gain measured in continuous wave and pulsed modes with the heat sink temperature ranging from 20°C to 120°C. The results show that the p-doping can significantly reduce the self-heating effect in QD lasers.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; indium compounds; optical pulse generation; quantum dot lasers; InAs-GaAs; continuous wave; heat sink temperature; modal gain; p-doping levels; pulsed modes; quantum dot lasers; self heating effect; temperature 20 degC to 120 degC; threshold current density; wavelength 1.3 mum; Gallium arsenide; Heat sinks; Laser modes; Measurement by laser beam; Quantum dot lasers; Temperature measurement; $p$-doping; Characteristic temperature $(T_{0})$; modal gain; quantum dot (QD);
  • fLanguage
    English
  • Journal_Title
    Photonics Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1943-0655
  • Type

    jour

  • DOI
    10.1109/JPHOT.2011.2161865
  • Filename
    5953463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1271570