DocumentCode :
1271570
Title :
Self-Heating Effect on Modal Gain of 1.3- 
InAs/GaAs QD Lasers With Different 
Author :
Wang, Rui ; Yoon, Soon Fatt ; Zhao, Han Xue ; Liu, Chong Yang
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
3
Issue :
4
fYear :
2011
Firstpage :
713
Lastpage :
717
Abstract :
The self-heating effect in 1.3-μm InAs/GaAs quantum dot (QD) lasers with different doping levels has been investigated by comparing the characteristics of the threshold current density (Jth) and modal gain measured in continuous wave and pulsed modes with the heat sink temperature ranging from 20°C to 120°C. The results show that the p-doping can significantly reduce the self-heating effect in QD lasers.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; optical pulse generation; quantum dot lasers; InAs-GaAs; continuous wave; heat sink temperature; modal gain; p-doping levels; pulsed modes; quantum dot lasers; self heating effect; temperature 20 degC to 120 degC; threshold current density; wavelength 1.3 mum; Gallium arsenide; Heat sinks; Laser modes; Measurement by laser beam; Quantum dot lasers; Temperature measurement; $p$ $(T_{0})$
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2011.2161865
Filename :
5953463
Link To Document :
