DocumentCode
1271578
Title
A Kinetic Model for Ammonia Adsorption on a Titanium Nitride Surface
Author
Supan, Karen E. ; Ingley, Herbert A. ; Pohle, Roland ; Hahn, David W.
Author_Institution
Dept. of Mech. & Aerosp. Eng., Univ. of Florida, Gainesville, FL, USA
Volume
12
Issue
5
fYear
2012
fDate
5/1/2012 12:00:00 AM
Firstpage
843
Lastpage
848
Abstract
Recent developments aiming to microsensors based on floating gate field effect transistors (FGFET) were investigated for application in a rodent cage monitoring. Given that these sensors were on the forefront of technology, a theoretical model was developed for the ammonia sensor to further understand the chemical reaction taking place on its surface. The sensors were tested in a controlled environment, where the air quality was known. The magnitude and time of the response to different levels of ammonia were determined in the 50-100 ppm range. The reaction mechanism selected for the model which was best supported by the literature and the experiments was molecular adsorption of ammonia on a titanium nitride surface. The experimental results were fitted to the model to obtain the adsorption and desorption rate constants, the equilibrium concentration constant, equilibrium constant, and Gibb´s free energy, which were 6.28 L/mol · s, 6.43 × 10-3 s-1, 976.7 L/mol, 39.04, and -9.25 kJ/mol, respectively. Based on these values, it was determined that the forward reaction, or adsorption, occurs spontaneously. There was good correlation between the theoretical model and the experimental results, indicating that the theoretical model was sufficient for this application.
Keywords
adsorption; ammonia; chemical equilibrium; chemical sensors; desorption; field effect transistors; free energy; microsensors; FGFET; Gibb´s free energy; NH3; TiN; adsorption rate constant; air quality; ammonia adsorption kinetic model; ammonia molecular adsorption; ammonia sensor; chemical reaction; desorption rate constant; equilibrium concentration constant; equilibrium constant; floating gate field effect transistor; microsensor; reaction mechanism selection; rodent cage monitoring; Animals; Gas detectors; Mathematical model; Temperature sensors; Time factors; Titanium; Chemical sensors; condition monitoring; floating-gate field effect transistors (FGFET); titanium;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2011.2161632
Filename
5953464
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