• DocumentCode
    1271889
  • Title

    Transmission gate switch for ESD protection of RF pad

  • Author

    Nikolaidis, T. ; Papadas, C.

  • Author_Institution
    ISD SA, Athens, Greece
  • Volume
    38
  • Issue
    7
  • fYear
    2002
  • fDate
    3/28/2002 12:00:00 AM
  • Firstpage
    318
  • Lastpage
    319
  • Abstract
    A novel transmission gate switch is proposed to effectively replace electrostatic discharge (ESD) protection resistors in CMOS I/O pads. The proposed circuit exhibits a very low on resistance, under normal operation, and a very high off resistance, in the case of ESD stresses. A triple-well CMOS implementation guarantees RF operation and enhanced ESD reliability
  • Keywords
    CMOS integrated circuits; electrostatic discharge; integrated circuit reliability; protection; CMOS IC; ESD protection; I/O pad; RF operation; off-resistance; on-resistance; reliability; transmission gate switch;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020235
  • Filename
    995482
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1271889