Title :
Transmission gate switch for ESD protection of RF pad
Author :
Nikolaidis, T. ; Papadas, C.
Author_Institution :
ISD SA, Athens, Greece
fDate :
3/28/2002 12:00:00 AM
Abstract :
A novel transmission gate switch is proposed to effectively replace electrostatic discharge (ESD) protection resistors in CMOS I/O pads. The proposed circuit exhibits a very low on resistance, under normal operation, and a very high off resistance, in the case of ESD stresses. A triple-well CMOS implementation guarantees RF operation and enhanced ESD reliability
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit reliability; protection; CMOS IC; ESD protection; I/O pad; RF operation; off-resistance; on-resistance; reliability; transmission gate switch;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020235
