Title :
Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region
Author :
Ramakrishnan, A. ; Steinle, G. ; Supper, D. ; Degen, C. ; Ebbinghaus, G.
Author_Institution :
Infineon Technol. AG, Munich, Germany
fDate :
3/28/2002 12:00:00 AM
Abstract :
The authors report an electrically pumped MOVPE-grown VCSEL on GaAs substrate with a GaInNAs active region emitting single mode at 1293 nm with record characteristics. Continuous wave output power at room temperature with 1.4 mW, a threshold current of 1.25 mA and a data transmission rate of 10 Gbit/s has been realised
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; optical transmitters; quantum well lasers; surface emitting lasers; vapour phase epitaxial growth; 1.25 mA; 1.3 micron; 1.4 mW; 10 Gbit/s; 1293 nm; CW lasers; GaAs substrate; GaInNAs; GaInNAs active region; Gbit/s MOVPE grown; MQW lasers; continuous wave output power; data transmission rate; electrically pumped; monolithic VCSEL; room temperature; single mode lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020226
