DocumentCode
1271924
Title
Modal refractive index of 1.3 μm InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure
Author
Jin, S.R. ; Fehse, R. ; Sweeney, S.J. ; Knowles, Gerry ; Adams, A.R. ; O´Reilly, E.P. ; Riechert, H. ; Illek, S. ; Egorov, A.Yu. ; Thijs, P.J.A. ; Uchida, Tomoyuki ; Fujii, Teruya
Author_Institution
Dept. of Phys., Surrey Univ., Guildford, UK
Volume
38
Issue
7
fYear
2002
fDate
3/28/2002 12:00:00 AM
Firstpage
325
Lastpage
327
Abstract
The accurate experimental determination of the modal refractive index of 1.3 μm InGaAsP, AlGaInAs and GaInNAs multiple quantum-well lasers by measuring the longitudinal mode separation up to a pressure of 15 kbar is reported for the first time. A small increase of the indices is observed for the three materials with increasing pressure, which causes a decrease of lasing wavelength
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; quantum well lasers; refractive index measurement; 1.3 micron; 15 kbar; AlGaInAs; GaInNAs; InGaAsP; accurate experimental determination; high hydrostatic pressure; increasing pressure; lasing wavelength; longitudinal mode separation; modal refractive index; multiple quantum-well lasers; pressure; refractive index measurement; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020217
Filename
995487
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