DocumentCode
1271947
Title
40Gbit/s master-slave D-type flip-flop in InP DHBT technology
Author
Kasbari, A. ; André, Ph ; Godin, J. ; Konczykowska, A.
Author_Institution
OPTO + Alcatel R&I, Marcoussis, France
Volume
38
Issue
7
fYear
2002
fDate
3/28/2002 12:00:00 AM
Firstpage
330
Lastpage
331
Abstract
A D-type flip-flop (MS D-FF) fabricated in a self-aligned InP DHBT technology is presented. 40 Gbit/s on-wafer measurements (limited by measurement setup) show good rise/fall times, low time jitter, as well as important regenerating capabilities. Some important design aspects are highlighted
Keywords
III-V semiconductors; flip-flops; heterojunction bipolar transistors; indium compounds; 40 Gbit/s; InP; circuit design; fall time; master-slave D-type flip-flop; on-wafer measurement; regenerating capability; rise time; self-aligned InP DHBT technology; time jitter;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020241
Filename
995490
Link To Document