• DocumentCode
    1272012
  • Title

    Doping effects on thermal behaviour of silicon resistor

  • Author

    Boukabache, A. ; Pons, P.

  • Author_Institution
    Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
  • Volume
    38
  • Issue
    7
  • fYear
    2002
  • fDate
    3/28/2002 12:00:00 AM
  • Firstpage
    342
  • Lastpage
    343
  • Abstract
    Doping effects on the thermal behaviour of a silicon resistor are studied using different models of hole mobility. The results indicate that the two thermal coefficients of the resistor are strongly dependent on doping concentration. For the first-order coefficient α, there is a minimal value (~250 ppm/°C) for a particular doping concentration (~4 × 1018 cm-3); for the second-order coefficient β, its value decrease monotonously according to doping concentration, until zero
  • Keywords
    elemental semiconductors; hole mobility; resistors; semiconductor device models; semiconductor doping; silicon; Si; TCR; device model; doping concentration; first-order coefficient; hole mobility; second-order coefficient; silicon resistor; thermal coefficient;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020221
  • Filename
    995500
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1272012