Title :
Electro-absorption and electro-refraction in InGaAsN quantum well structures
Author :
Jalili, Y.S. ; Stavrinou, P.N. ; Roberts, J.S. ; Parry, G.
Author_Institution :
Blackett Lab., Imperial Coll. of Sci., Technol. & Med., London, UK
fDate :
3/28/2002 12:00:00 AM
Abstract :
The first observation of electro-absorption in a InGaAsN-GaAs single quantum well p-i-n diode structure is reported. Clear excitonic resonances were observed at room temperature at 1150 nm an a strong Stark shift is obtained for applied fields of up to 2.6 × 107 V/m. The field induced changes in refractive index were calculated at 1300 and 1550 nm and it is concluded that low voltage phase modulators could be fabricated using this material
Keywords :
III-V semiconductors; Stark effect; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; p-i-n diodes; refractive index; semiconductor quantum wells; 1150 to 1550 nm; InGaAsN-GaAs single quantum well; QW PIN diode structure; Stark shift; electroabsorption; electrorefraction; excitonic resonances; field induced changes; low voltage phase modulators; quantum well PIN diode structure; refractive index;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020236
