Accurate Extraction Method of Reverse Recovery Time and Stored Charge for Ultrafast Diodes

Author

Kang, I.H. ; Kim, S.C. ; Bahng, W. ; Joo, S.J. ; Kim, N.K.

Author_Institution

Center for Energy Efficient Semicond., Korea Electrotechnol. Res. Inst., Changwon, South Korea

Volume

27

Issue

2

fYear

2012

Firstpage

619

Lastpage

622

Abstract

This letter presents a novel extraction method to accurately determine a reverse recovery time and a stored charge for ultrafast diodes. To obtain this, a test circuit to measure those parameters was accurately modeled by considering an inductance and a parasitic resistance, which are inherently embedded in the test circuit and lead to oscillation. The experimental results showed that the corrected reverse recovery time was reduced by 1.2 ns for an Si fast recovery diode, while by 6.8 ns for an SiC Schottky barrier diode, compared to their measured reverse recovery time.

Keywords

Schottky diodes; charge storage diodes; inductance; oscillations; silicon compounds; wide band gap semiconductors; Si; SiC; SiC Schottky barrier diode; extraction method; inductance; oscillation; parasitic resistance; recovery diode; reverse recovery time; stored charge; test circuit; ultrafast diodes; Current measurement; Inductance; Semiconductor device measurement; Semiconductor diodes; Silicon; Silicon carbide; Time measurement; Fast recovery diodes (FRDs); Schottky barrier diodes (SBDs); parasitic components; reverse recovery time $t_{rm rr}$; stored charge $Q_{rm rr}$;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2011.2161889

Filename

5953526